Introduction
In semiconductor fabrication, controlling impurities in specialty gases is critical, as otherwise it will lead to unwanted formation of deposits on the wafer surface, adversely affecting device performance and yield, and carbon monoxide (CO) is no exception. The industry’s traditional method to test for metallic impurities in specialty gases is the impinger one, which has some limitations with the impurities exchange to the liquid media and requires extended sample prep time.
This application note describes an alternative sample prep method – gas direct injection (GDI), a technique that enables the direct analysis of a sample gas without the need to utilize an impinger – coupling the GDI to the NexION® 2200 ICP-MS. You will discover its benefits over the traditional impinger method in metal-impurity analysis of CO, which include lower detection limits and background equivalent concentrations as well as a significant reduction in analysis time.
Like what you're reading?
To view the full content, please answer a few questions.